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NSS1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. * This is a Pb-Free Device
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Base Current - Continuous Collector Current - Continuous Collector Current - Peak Total Power Dissipation Total PD @ TA = 25C (Note 1) Total PD @ TA = 25C (Note 2) Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IB IC PD 2.0 0.8 TJ, Tstg -55 to +150 C Max -100 -140 -7.0 1.0 2.0 3.0 Unit Vdc Vdc Vdc Adc Adc W A Y W 1C200 G = Assembly Location = Year = Work Week = Specific Device Code = Pb-Free Package SOT-223 CASE 318E STYLE 1 AYW 1C200G 1
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-100 VOLTS, 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR
COLLECTOR 3 1 BASE 2 EMITTER
MARKING DIAGRAM
PIN ASSIGNMENT
Unit C/W 4 C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Symbol RqJA 64 155 TL 260 C Max
B 1
C 2
E 3
Top View Pinout
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. mounted on 1 sq. (645 sq. mm) Collector pad on FR-4 bd material 2. mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 bd material
ORDERING INFORMATION
Device NSS1C200T1G NSS1C200T3G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/ Tape & Reel 4000/ Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
1
April, 2008 - Rev. 0
Publication Order Number: NSS1C200MZ4/D
NSS1C200MZ4
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -140 Vdc, IE = 0) Emitter Cutoff Current (VEB = -6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector - Emitter Saturation Voltage (Note 3) (IC = -0.1 A, IB = -0.010 A) (IC = -0.5 A, IB = -0.050 A) (IC = -1.0 A, IB = -0.100 A) (IC = -2.0 A, IB = -0.200 A) Base - Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.100 A) Base - Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = 3.0 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. hFE 150 120 80 50 VCE(sat) -0.040 -0.080 -0.125 -0.220 VBE(sat) -0.950 VBE(on) -0.850 fT 120 Cibo Cobo 200 22 pF pF MHz V V 360 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -100 -140 -7.0 -100 -50 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit
V
TYPICAL CHARACTERISTICS
2.5 PD, POWER DISSIPATION (W) 2.0 TC
1.5
1.0 TA 0.5 0 25 50 75 100 125 150 T, TEMPERATURE (C)
Figure 1. Power Derating
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NSS1C200MZ4
TYPICAL CHARACTERISTICS
500 150C VCE = 2 V hFE, DC CURRENT GAIN 400 500 150C VCE = 4 V
hFE, DC CURRENT GAIN
400
300 25C 200 -55C 100 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A)
300 25C 200 -55C 100 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1 IC/IB = 20
Figure 3. DC Current Gain
150C 25C 0.1
0.1 150C 25C -55C 0.001 0.01 0.1 1 10
-55C
0.01 IC, COLLECTOR CURRENT (A)
0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A)
Figure 4. Collector-Emitter Saturation Voltage
1.2 IC/IB = 10 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 -55C 25C VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 1.2
Figure 5. Collector-Emitter Saturation Voltage
IC/IB = 50
0.8 -55C 25C
0.6
0.6
0.4 0.2
150C
0.4 0.2
150C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Base-Emitter Saturation Voltage
Figure 7. Base-Emitter Saturation Voltage
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NSS1C200MZ4
TYPICAL CHARACTERISTICS
VBE(on), BASE-EMITTER VOLTAGE (V) 1.2 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 2 V 1.0 1 3.0 A 2.0 A 1.0 A 0.5 A 0.1 IC = 0.1 A
0.8 -55C 25C
0.6
0.4 150C 0.2 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A)
0.01 0.0001 0.001 0.01 0.1 IB, BASE CURRENT (A)
TJ = 25C 1
Figure 8. Base-Emitter Voltage
400 Cib, INPUT CAPACITANCE (pF) TJ = 25C ftest = 1 MHz 300 Cob, OUTPUT CAPACITANCE (pF) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 0
Figure 9. Collector Saturation Region
TJ = 25C ftest = 1 MHz
200
100
0 VBE, EMITTER BASE VOLTAGE (V)
10
20
30
40
50
60
70
80
90 100
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
120 fTau, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 100 80 60 40 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25C ftest = 1 MHz VCE = 10 V 10
Figure 11. Output Capacitance
0.5 mS 1 100 mS 1 mS
10 mS 0.1
TJ = 25C 0.01 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) 100
Figure 12. Current-Gain Bandwidth Product
Figure 13. Safe Operating Area
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NSS1C200MZ4
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE L
D b1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 -
4
HE
1 2 3
E
b e1 e q C
DIM A A1 b b1 c D E e e1 L1 HE
q
MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0
MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0
MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10
A 0.08 (0003) A1
L1
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
SOLDERING FOOTPRINT
3.8 0.15 2.0 0.079
2.3 0.091
2.3 0.091
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
SCALE 6:1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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